Control of Conducting Path in Resistive Memory Utilizing Ferritin Protein with Metal Nano Dot
نویسندگان
چکیده
Bio-nano-process (BNP) has been proposed as promising bottom-up process to fabricate nanostructure. The application of BNP to memory devices such as resistive random access memory (ReRAM) is large interested because BNP could offer attractive solution to reduce the memory size and improve the device performance. We investigate the application of metal nano dot to ReRAM for control the filament path. Memory switching mechanism in ReRAM is supposed to be based on the formation and rupture of random nano-filament. Metal nano dot can be expected to help the formation of the confined filament and stabilized switching performance. We succeeded to localize the conductive filament by gold nano dot. The device with Pt nano dots embedded in NiO exhibit stable resistance switching.
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